دیتاشیت NTD4856N-1G

مشخصات دیتاشیت

دانلود دیتاشیت NTD4856N,NVD4856N	NTD4856N,NVD4856N Datasheet

Manufacturer: ON Semiconductor
Series: -
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2241pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: NTD48
detail: N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Through Hole I-PAK